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January 31, 1996
(blue-green semiconductor laser 515nm, over 100-hour)
Sony Corporation today announced successful demonstration of an over 100-hour, continuous-wave operation of a blue-green semiconductor laser at room temperature.
The II-VI laser diode used for this demonstration was composed of a ZnCdSe / ZnSSe quantum-well active layer, and a ZnMgSSe cladding layer originally developed by Sony in 1991. Among other factors, the 100-hour-long room temperature continuous-wave operation was made possible through a successful reduction of the pre-existing defect density, to less than 10,000/sq.cm from 100,000/sq.cm previously.
Because of its high suitability as a light source for high-density optical storage, semiconductor lasers have been the subject of intense research at universities and companies all over the world.
Major Sony achievements in the continuous-wave operation of semiconductor laser include the following:
- blue semiconductor laser (447 nm) at liquid nitrogen temperature
- blue-green semiconductor laser (523 nm) at room temperature
- blue semiconductor laser (489.9 nm) at room temperature
- blue-green semiconductor laser (507 nm), 1 hour at room temperature
- blue-green semiconductor laser (510 nm), 4.3 hours at room temperature
Sony is determined to continue its research in further shortening the wavelength and extending the time of continuous-wave operation of semiconductor lasers.*Data Emission wavelength: 515 nm Duration of continuous-wave operation: 101.5 hours Operating voltage: 11V Threshold current: 32 mA Light output: 1 mW Operating current 33 mA
Structure of Laser Diode