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Sony Semiconductor Solutions Corporation
Tokyo, Japan—Sony Corporation today announced that it has developed a 1.46 effective megapixel back-illuminated CMOS image sensor equipped with a Global Shutter function*1. The newly developed pixel-parallel analog-to-digital converters provide the function to instantly convert the analog signal from all pixels, simultaneously exposed, to a digital signal in parallel. This new technology was announced at the International Solid-State Circuits Conference (ISSCC) on February 11, 2018 in San Francisco in the United States.
CMOS image sensors using the conventional column A/D conversion method*2 read out the photoelectrically converted analog signals from pixels row by row, which results in image distortion (focal plane distortion) caused by the time shift due to the row-by-row readout.
The new Sony sensor comes with newly developed low-current, compact A/D converters positioned beneath each pixel. These A/D converters instantly convert the analog signal from all the simultaneously exposed pixels in parallel to a digital signal to temporarily store it in digital memory. This architecture eliminates focal plane distortion due to readout time shift, making it possible to provide a Global Shutter function*1, an industry-first for a high-sensitivity back-illuminated CMOS sensor with pixel-parallel A/D Converter with more than one megapixel*3.
The inclusion of nearly 1,000 times as many A/D converters compared to the traditional column A/D conversion method*2 means an increased demand for current. Sony addressed this issue by developing a compact 14-bit A/D converter which boasts the industry's best performance*4 in low-current operation.
Both the A/D converter and digital memory spaces are secured in a stacked configuration with these elements integrated into the bottom chip. The connection between each pixel on the top chip uses Cu-Cu (copper-copper) connection*5, a technology that Sony put into mass production as a world-first in January 2016.
In addition, a newly developed data transfer mechanism is implemented into the sensor to enable the high-speed massively parallel readout data required for the A/D conversion process.
|Low power mode||Low noise mode|
|Effective pixels||1632(H) × 896(V)|
|Unit cell size||6.9 [μm] × 6.9 [μm]|
|Max. frame rate||660 [fps]|
|Power consumption||654 [mW]||746 [mW]|
|RMS random noise(@ analog gain 0[dB])||8.77 [e-rms]||5.15 [e-rms]|
|Dynamic range||65.7 [dB]||70.2 [dB]|
|A/D converter resolving capability||14 [bit]|