The press releases on this website are provided for historical reference purposes only.
Please note that certain information may have changed since the date of release.
October 23, 2017
October 23, 2017
Revised on May 30, 2018
Revised on November 30, 2018
Sony Semiconductor Solutions Corporation
Tokyo, Japan — Sony Corporation ("Sony") today announced the release of the IMX324, a new 1/1.7-type stacked CMOS image sensor equipped with the industry's highest resolution*1 7.42 effective megapixel RCCC filter*2 for forward-sensing cameras in advanced driver-assistance systems (ADAS). Sony will begin shipping samples in November 2017.
|Model name||Sample shipment date||Mass-production shipment date (planned)||Sample price (excluding tax)|
|IMX324 type 1/1.7, 7.42 effective megapixel CMOS image sensor for automotive cameras||November 2017||
This image sensor is capable of approximately three times the horizontal resolution of conventional products,*3 which enables high-definition image capture of distant road signs approximately 160 meters*4 ahead of the camera. Furthermore, the sensor is equipped with a pixel binning mode*5 for further raising the sensitivity in low-light environments, achieving the high sensitivity of 2666 mV, making it possible to capture images of pedestrians and obstacles even in dark nighttime situations that are equivalent to the brightness of moonlight. Even in environments with uneven, mixed levels of brightness, due to headlights and streetlights when driving at night, the sensor is equipped with a function that alternately captures dark sections at high-sensitivity settings and bright sections at high resolution, enabling high-precision image recognition when combined with the signal processing of the latter stage.
This is the first time in the industry*6 where a stacked configuration has been employed on an automotive grade sensor. This arranges the pixel array and signal processing circuit in layers to allow for a compact size and low power consumption while still delivering high resolution.
This image sensor is expected to be compatible with the "EyeQ®4" and "EyeQ®5" image processors currently being developed by Mobileye, an Intel Company headquartered in Israel, for use in ADAS and autonomous vehicle technology.
This sensor is planned to meet the AEC-Q100 Grade 2 reliability testing standards for automotive electronic components by
June 2018the mass production timing*. Sony has also introduced a development process compliant with ISO 26262 automobile functional safety standards, to ensure design quality that satisfies the functional safety requirements for an automotive product, and this has led to its supporting functional safety requirement level ASIL B(D)*7 for failure detection, notification, and control. Moreover, the new sensor comes with a security feature that protects the output image from being altered, which is the industry's first*6 application of such a function in an image sensor for automotive cameras.
1．7.42 megapixels — the industry's highest resolution*1 for image sensors for automotive cameras
The new image sensor is capable of approximately three times the horizontal resolution of conventional products,*3 which enables high-definition image capture of distant road signs approximately 160 meters*4 ahead of the camera.
The sensor is equipped with a pixel binning mode for raising the sensitivity in low-light environments. The pixel binning mode on this sensor adds data from a total of four pixels and processes it as a single pixel to raise the sensitivity when reading image data. The pixel binning mode and RCCC filter*2 together achieve the high sensitivity of 2666 mV, making it possible to capture images of distant obstacles and people even in low-light environments as low as 0.1 lux, equivalent to the brightness of moonlight. Also, by switching between pixel binning mode and full pixel mode for each frame it is possible to capture bright sections illuminated by the headlights in high resolution, and dark sections not illuminated by headlights at high sensitivity, thereby enabling high-precision image recognition when combined with the signal processing of the latter stage.
A stacked configuration has been implemented on the image sensor, arranging the pixel array and signal processing circuits in different layers to achieve compact size and low power consumption while delivering high resolution.
|Number of effective pixels||3849 (H) x 1929 (V) 7.42 megapixels|
|Image size||Diagonal 9.69mm (type 1/1.7)|
|Unit cell size||2.25μm (H) x 2.25μm (V)|
|Frame rate||Full pixel reading||Max. 40 fps|
|Sensitivity (F5.6 standard value, 1/30 second exposure time)||784 mV (Clear Pixel), 2666 mV (pixel binning mode)|
|Dynamic range (EMVA1288 standard)||120dB|
|Saturation signal (minimum value)||800mV|
|Interface||MIPI CSI-2 serial output (4 lane / 2 lane)|
|Package||108pin plastic BGA|
|Package size||13.23mm x 8.97mm|