Sony Corporation today announced successful demonstration of an over 100-hour, continuous-wave operation of a blue-green semiconductor laser at room temperature.
The II-VI laser diode used for this demonstration was composed of a
ZnCdSe / ZnSSe quantum-well active layer, and a ZnMgSSe cladding layer
originally developed by Sony in 1991. Among other factors, the
100-hour-long room temperature continuous-wave operation was made
possible through a successful reduction of the pre-existing defect
density, to less than 10,000/sq.cm from 100,000/sq.cm previously.
Because of its high suitability as a light source for high-density optical storage, semiconductor lasers have been the subject of intense research at universities and companies all over the world.
Major Sony achievements in the continuous-wave operation of semiconductor laser include the following:
- 1992:
- blue semiconductor laser (447 nm) at liquid nitrogen temperature
- 1993:
- blue-green semiconductor laser (523 nm) at room temperature
- 1993:
- blue semiconductor laser (489.9 nm) at room temperature
- 1994:
- blue-green semiconductor laser (507 nm), 1 hour at room temperature
- 1995:
- blue-green semiconductor laser (510 nm), 4.3 hours at room temperature
Sony is determined to continue its research in further shortening the wavelength and extending the time of continuous-wave operation of semiconductor lasers.
*Data
Emission wavelength: 515 nm
Duration of continuous-wave operation: 101.5 hours
Operating voltage: 11V
Threshold current: 32 mA
Light output: 1 mW
Operating current 33 mA
Structure of Laser Diode
