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SLD336VF [ 750 mW High Power Laser Diode ]

>>Description

The SLD336VF is a 750 mW high power laser diode designed to have a uniform emission area that is suitable for the applications for solid-state laser excitation, measurement and printing, etc.
It adopts a φ5.6 package that is easy to handle.

>>Applications

solid-state laser excitation, measurement and printing

>>Features

High-power
Recommended optical power output Po = 750 mW
High-optical power density: 750 mW/75 µm (Emitting line width)

>>Structure

AlGaAs quantum well structure laser diode

>>Absolute Maximum Ratings (Tc=25°C)

Optical power output Pomax 825 mW
Reverse voltage VR LD 2 V
Operating temperature(Tc) +10 to +35 °C
Storage temperature −40 to +85 °C

>>Operating Lifetime

MTTF 10,000 h (effective value) at Po = 750 mW, Tc = 25 °C

Sony reserves the right to change products and specifications without prior notice.

GaAs MMIC's are ESD sensitive devices. Special handling precautions are required.

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