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Featuring
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* Wafer Thinning Technology
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In the current CMOS image sensor structure, light receiving layers (photodiodes and transistors) that collect light are formed on the surface of a silicon substrate. While the silicon substrate itself is about 600 to 800 µm thick, in the Sony "Exmor R" CMOS image sensors, it was necessary to make of the silicon substrate, including the metal wiring layer, have a thickness of about 8 µm to allow light to be received through the back of the substrate. However, this thinning can cause wafer surface distortion and warping that cannot be seen by the naked eye as well as micrometer level positional discrepancies and height differences. If we were to see a 1 µm pixel as a person, then these height differences would be like a bump the height of a person on a skating rink that was expected to be smooth. This meant that it would not be possible to form the on-chip lenses and color filters over 1 µm pixels. To resolve this issue, Sony developed a new wafer thinning technology to assure that such distortion and warping does not occur.
* Unique Sony Photodiode Structure
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In image sensors, it is easy for electrons that are unrelated to the incident light to be generated from the silicon surface, and even a single electron can become noise of a level that is visible to the naked eye. To avoid this problem, Sony developed a technology that prevents the generation of electrons that occurs at surface defects for this back-illuminated structure in which light is received on the back surface of the wafer.
Furthermore, since light is received on the back surface, it is necessary to transport all the photoelectrons that are generated at the back surface to the circuits on the front surface of the device. Sony also succeeded in developing a unique photodiode with a structure that makes this possible.

 
* Future Developments
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Back-illuminated CMOS image sensors not only make high-sensitivity and low-noise imaging possible, but they also make it possible to use multi-layer metal wirings and arbitrary transistor structures. This means that we can expect even further improvements in speed and performance. Sony is committed to taking advantage of the superlative characteristics only available in back-illuminated CMOS image sensors and continuing our development efforts to create even easier to use and even higher picture quality image sensors.

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Figure 2 : Image Comparison (100 lx, F4.0, 1/30 s accumulation)

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