Sony’s antenna switches achieve low insertion loss and low-distortion through Sony’s unique JPHEMT
process technology. By combining this technology with a CMOS decoder,
Sony has achieved low-voltage operation and even lower distortion characteristics.
These devices incorporate a GaAs IPD low-pass filter to achieve a low mounting profile package.
Furthermore, no DC cut capacitor is required on the RF port,
which contributes to reducing the number of components.
The CXM3519ER and CXM3521AER are multiband antenna switch modules
that support the latest trend towards even thinner cellular phones.
CXM3519ER CXM3521AER
.
.
■ Low insertion loss, low distortion
Insertion loss: 0.85 dB@800 MHz,
0.88 dB@1.9 GHz
IMD3: -108 dBm@800 MHz,
-105 dBm@1.95 GHz
■ Built-in GaAs IPD low-pass filter
■ Miniature low-profile package
3.0 mm × 3.8 mm × 0.8 mm
（CXM3519ER）
3.8 mm × 4.4 mm × 0.8 mm
（CXM3521AER）
■ No DC cut capacitor required on
the RF port
Multiband Support
The CXM3519ER has an SP10T structure that
can switch between 6 GSM channel and 4
UMTS channel pins. It can also be used as an
SP9T switch.
In contrast, the CXM3521AER has an 3P9T
structure with three antenna pins and is the
industry's largest scale MMIC switch for the
consumer market. (See figure 1.)
Low Insertion Loss, Low Distortion
The CXM3519ER and CXM3521AER achieve
low insertion loss through Sony’s unique JPHEMT*1 process. This ignificantly
contributes to reduced current consumption
during transmission and improved receiver
sensitivity. (See table 1.) While there is a trend
towards increasingly strict distortion
characteristic standards, optimal design of the
CMOS decoder and JPHEMT switch discussed
here allowed us to improve the distortion
characteristics (IMD*2) by approximately 5
dB compared to current Sony products.
*1: JPHEMT: Junction Gate Pseudomorphic High
Electron Mobility Transistor
*2: IMD: Inter Modulation Distortion
IPD Low-Pass Filter
Sony adopted IPD*3 technology for the built-in
low-pass filter. Sony's IPD technology uses
thick-film deposition laminar technology on a
GaAs substrate to form high-Q inductors and
low-loss stripline to achieve low-loss/high-attenuation
characteristics.
Furthermore, this approach achieves further
miniaturization and lower profiles than the
conventional LTCC base technology (less than
one half the height of an LTCC low-pass
filter). (See figure 2.)
*3 IPD: Integrated Passive Device
Miniature Low-Profile Package
The CXM3519ER adopts the VQFN miniature low-profile package. Including the external
components, it achieves a mounting area
reduction of over 40% compared to current
products. The CXM3521AER uses the same
VQFN package and also provides
miniaturization. (See figure 3.)
RF Port DC Cut Capacitor not
Required
Compared to current products, the
CXM3519ER and CXM3521AER can provide
a significant reduction in the number of
components. This is because the DC cut
capacitors on the RF port are no longer needed,
due to Sony’s unique circuit technologies.
This allows the end product circuit board
mounting area to be made smaller. The
reduction in the parts count can also lead to
reduced total costs. (See figure 4.)
•••• Mr. Ikeda ••••
The CXM3519ER and CXM3521AER
introduced here are, in typical Sony fashion,
filled with unique technologies. These have
already been well received in the market.
We are now expanding our product line
and are providing products to respond to a
wide range of needs. I strongly recommend
that you consider these devices.
GSM/UMTS Dual Mode 8-Band Low Insertion
Loss/Low-Distortion High-Frequency Antenna
Switch Modules for Cellular Phones
Multiband Support
Vol.52