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Bluetooth Module
Achieves the Industry's Top Class in Thinness:
1.2 mm
CXN2000
Sony's newly-developed CXN2000
uses Sony's passive device integration technology,
which combines semiconductor and substrate technologies,
to achieve the industry's top level of performance
and miniaturization.
This ultraminiature thin-form Bluetooth module
is the first product implemented based on Sony's
technological innovation that allows organic
substrates to be handled on a semiconductor fabrication
line. |
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CXN2000 |
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* Conforms to the Bluetooth™ specifications Version 1.1(Class 2)
* UART, PCM, and SPI interfaces
* 4 Mbit flash memory, crystal, and band-pass filter built in
* 1.8 V and 3.0 V power supply operation
* Passive component integration technology achieves ultraminiature package size: 8.4 x 8.7 x 1.2 mm
» Bluetooth is a trademark of Bluetooth SIG, Inc., and is licensed by Sony Corporation. |
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Product Specifications Overview |
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The CXN2000 is an ultraminiature thin form factor Bluetooth module that combines a single-chip CMOS LSI and RF passive component substrate. It includes the oscillator crystal, supports Bluetooth Version 1.1 Class 2, integrates 4 Mbit of flash ROM, and provides PCM, SPI, UART, and other interfaces. It can be used as the HCI (Host Controller Interface) basic module in all types of Bluetooth applications. As an option, it can also support the USB interface. |
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Ultraminiature Thin Form Factor Achieved |
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The substrate process technology used in this product can integrate low-loss, high-precision passive components, such as resistors, capacitors, and inductors on the substrate itself. The substrate can also integrate all the passive components, such as band-pass filters, baluns, and decoupling capacitors, required for the RF circuits. This allows the creation of modules in thin form factor ultraminiature packages that would have been impossible with conventional technologies. |
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High Sensitivity and Low Noise Characteristics |
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Passive components are only used in the upper thin-film section of the substrate and the digital wiring is formed mainly in the lower organic substrate area. By laying out the analog circuits in the upper section, this technology avoids interference between the analog and digital blocks. As a result, the CXN2000 achieves superlative characteristics, including a reception sensitivity of -82 dBm and a CI value of under -30 dB (at 2 MHz). |
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High Reliability |
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This module uses organic materials
as the base for all components, and as is result
is extremely light yet still provides superlative
resistance to mechanical shock. Furthermore, the
thermal expansion coefficient of the module is
extremely close to that of the motherboard and
the LGA structure (or BGA structure, if desired)
is used for the mounting surface land structure.
As a result, this module achieves superlative
motherboard mounted reliability test results in
heat cycle tests, drop strength tests, and bending
strength tests. |
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Future Developments |
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The most important feature
of the integrated passive component substrate
mounting technology used in this module is that
it allows high-frequency components to be implemented
in a thin form factor. As a result, this technology
can be used in all types of communication modules
that will be included in portable electronic equipment.
Furthermore, the self-oscillation frequency of
these passive components (the highest frequency
at which they can be used) is extremely high:
over 10 GHz. This means that they are optimal
for a wide range of applications, such as wireless
LANs, that operate at 5 GHz and over. |
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••••
Mr.MUTO•••• |
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In this design effort, which
applied Sony's integrated high-frequency passive
device substrate technology, every time we'd make
a pro-totype, we'd be asked to make it even smaller.
This was extremely difficult within the strict
constraints, but it was an extremely rewarding
project. The desires for even further miniaturization
in RF filter components in general, not only for
Bluetooth products, are expected to increase,
and we are committed to responding to those desires
as well. |
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See all
articles with figures and tables.  |
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Vol.34 |
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